HTDS announces the exclusive commercialization on the French market of the new APD InGaAs C30733 photodiode developed by its Canadian partner Excelitas Technologies.
A next-generation photodiode for ultra-fast detection of optical signals
This new ultra-fast photodiode InGaAs C30733 completes the already substantial product offer offered by HTDS in optoelectronics. Particularly optimized for applications requiring extremely fast optical signal detection, this new fast lnGaAs avalanche photodiode (APD) offers low noise, high quantum gain and efficiency in a wide spectral range from 1000 to 1700 nm.
Available in different hermetic TO housings, either in free space or fiber for optimal coupling on its active diameter of 30 μm.
"In the end, this remarkable combination makes the new InGaAs C30733 photodiode an ideal solution for all laser telemetry and telecom test and measurement applications and systems," says HTDS.
Advantageous features for a wide range of cutting-edge applications
An avalanche photodiode (APD) is an optoelectronic component that differs from other detectors by the avalanche effect to generate a very large gain (which can be greater than 500) compared to a PIN photodiode. This gain makes it possible to detect very low luminous fluxes.
As for the new INGaAs C30733 APD photodiode, it offers advantageous features:
- High bandwidth (3 GHz typ.)
- High spectral sensitivity: 0.94 A/W
- Faible courant d'obscurité < 10nA
- Very small active area (30 μm)
- High gain
- Low noise (CIP max: 0.05 pW/√Hz)
- Available in fiber version (with FC/PC connector
- RoHS compliant
In addition to the fields of spectrophotometry, laser telemetry, confocal microscopy and fluorescence detection, the new InGaAs C30733 photodiode offers a wide range of possible applications.
Thus, its detection range between 1000 and 1700 nm allows, for example, to cover telecommunication applications in the spectral band 1300 to 1650 nm, with high precision and especially in optical reflectometry (OTDR) applications.
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