HTDS announces the exclusive marketing in France of the new APD InGaAs C30733 photodiode developed by its Canadian partner Excelitas Technologies.
A new-generation photodiode for ultra-fast detection of optical signals
This new ultra-fast InGaAs C30733 photodiode is the latest addition to HTDS's already extensive optoelectronics product range. Particularly optimized for applications requiring extremely fast optical signal detection, this new fast lnGaAs avalanche photodiode (APD) offers low noise, high gain and high quantum efficiency over a wide spectral range from 1000 to 1700 nm.
Available in a range of TO hermetic, free-space or fiber-optic housings for optimum coupling on its 30 µm active diameter.
"All in all, this remarkable combination makes the new InGaAs C30733 photodiode an ideal solution for all laser telemetry and telecom test and measurement applications and systems," says HTDS.
Advantageous features for a wide range of cutting-edge applications
An avalanche photodiode (APD) is an optoelectronic component distinguished from other detectors by the avalanche effect, which generates a very high gain (up to 500) compared with a PIN photodiode. This gain makes it possible to detect very low luminous fluxes.
The new APD InGaAs C30733 photodiode offers a number of advantageous features:
- High bandwidth (3 GHz typ.)
- High spectral sensitivity: 0.94 A/W
- Low dark current < 10nA
- Very small active surface (30 µm)
- High gain
- Low noise (NEP max: 0.05 pW/√Hz)
- Available in wired version (with FC/PC connector)
- RoHS compliant
In addition to spectrophotometry, laser range-finding, confocal microscopy and fluorescence detection, the new InGaAs C30733 photodiode offers a wide range of possible applications.
Its detection range of between 1000 and 1700 nm enables it to cover telecoms applications in the 1300 to 1650 nm spectral band, for example, with great precision, particularly in optical reflectometry (OTDR) applications.
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www.htds.fr